High-geometrical-resolution imaging of dislocations was demonstrated in 4H-SiC by using monochromatic synchrotron topography; but still under so-called integrated-wave conditions. In back-reflection topographs, 1c screw dislocation images were effectively magnified so as to appear as well-defined circular white spots, while basal plane dislocations with opposite edge Burgers vector components exhibited 2 distinct kinds of contrast features. All the dislocation images were precisely described by ray-tracing simulations. This imaging technique provided an accurate, comprehensive, and non-destructive characterization tool, which was needed by current SiC researchers was used for industrial applications. It also provided a simple picture for understanding the mechanisms underlying synchrotron diffraction imaging of defects.

High-Geometrical-Resolution Imaging of Dislocations in SiC Using Monochromatic Synchrotron Topography. X.R.Huang, D.R.Black, A.T.Macrander, J.Maj, Y.Chen, M.Dudley: Applied Physics Letters, 2007, 91[23], 231903