A review was presented of research on the advanced bulk crystal growth of SiC. A brief review highlighted the benefits of the so-called modified physical vapour transport technique which used an additional gas pipe for fine-tuning of the growth cell of a conventional physical vapour transport setup with additional gases. The main emphasis was placed on a systematic dislocation evolution study for various growth parameter sets. Besides doping, the growth temperature was considered. Two main results were found: In p-type SiC, regardless of the incorporation of Al or B acceptors, basal-plane dislocations that were harmful for bipolar power devices appeared less pronounced or were even absent when compared with n-type SiC. Growth at elevated seed temperatures (i.e. 2300C and higher) was beneficial in promoting low dislocation densities.

Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution. S.A.Sakwe, M.Stockmeier, P.Hens, R.Müller, D.Queren, U.Kunecke, K.Konias, R.Hock, A.Magerl, M.Pons, A.Winnacker, P.Wellmann: Physica Status Solidi B, 2008, 245[7], 1239-56