The criteria for reasonable choice of alternative to (00•1) seed orientation were considered. Growth conditions necessary to produce bulk 6H- and 4H-SiC crystals on rhombohedral (01-1n) plane seeds in PVT process were presented. Specific defect structures in such crystals were described in relation to growth conditions. In the second part of the paper, liquid-phase epitaxial growth using high-temperature silicon based flux and rhombohedral plane seeds was compared with liquid-phase epitaxy onto basal plane seeds. In both bulk and epitaxial growth processes the employment of rhombohedral plane seed offers important advantages.

Bulk and Epitaxial Growth of Micropipe-Free Silicon Carbide on Basal and Rhombohedral Plane Seeds. B.M.Epelbaum, O.Filip, A.Winnacker: Physica Status Solidi B, 2008, 245[7], 1257-71