Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current and cathodoluminescence techniques. electron-beam-induced current images show that basal plane dislocation was easily dissociated into two partial dislocations [Si(g) 30° and C(g) 30° partials], with a stacking fault between them. The electron-beam-induced current contrast of C(g) 30° partial was always several percent higher than that of Si(g) 30° partial. The stacking fault was brighter than the background, having the negative electron-beam-induced current contrast. The cathodoluminescence spectrum showed that a new peak (417nm) appeared at the stacking fault position. The origin of bright stacking faults in electron-beam-induced current images was analyzed in terms of quantum-well states.

Electron-Beam-Induced Current Study of Stacking Faults and Partial Dislocations in 4H-SiC Schottky Diode. B.Chen, J.Chen, T.Sekiguchi, T.Ohyanagi, H.Matsuhata, A.Kinoshita, H.Okumura, F.Fabbri: Applied Physics Letters, 2008, 93[3], 033514