A N-related pair defect was studied as a function of doping density in 4H and 6H SiC. Electron paramagnetic resonance measurements verify that one nucleus in the pair was N, but the second part of the pair remained uncertain. The pair concentration varies monotonically with N concentration in samples with doping density of 1018 to 1016/cm3 and the B concentration was an order of magnitude less than that of N. The pair center was not observed in the dark or under ultraviolet illumination when the N and B concentrations were similar. It was concluded that the pair was generated in all N-doped samples, but like the isolated N impurity, could be compensated by B.

Nitrogen-Related Point Defect in 4H and 6H SiC. M.E.Zvanut, J.van Tol: Physica B, 2007, 401-402, 73-6