A novel non-destructive method to characterize stacking faults in 3C-SiC crystals was presented. This method was based on fast X-ray diffraction reciprocal space mapping and could be used qualitatively for routine analysis of 3C-SiC as stacking faults give rise to a characteristic star-like pattern in reciprocal space whose intensity depends on the stacking fault density. The simulation of the diffusely scattered intensity streaks with an appropriate model also enables one to obtain quantitative results such as stacking fault densities, mosaic domain size and mosaicity. The model was tested with a commercial (001) 3C-SiC crystal from HAST corporation, and then it was used to analyze stacking faults in (111) 3C-SiC crystals grown by continuous feed-physical vapour transport.

Characterization of Stacking Faults in Thick 3C-SiC Crystals Using High-Resolution Diffuse X-ray Scattering. A.Boulle, D.Chaussende, F.Conchon, G.Ferro, O.Masson: Journal of Crystal Growth, 2008, 310[5], 982-7