The stacking faults in 4H-SiC epilayers were characterized by microphotoluminescence spectroscopy and photoluminescence intensity mapping at room temperature. Three kinds of stacking faults, intrinsic Frank stacking faults, double Shockley stacking faults, and in-grown stacking faults, were identified in the samples. Each kind of stacking fault shows the distinct photoluminescence emission located at 420, 500 and 455nm, respectively. The shapes and distributions of stacking faults were profiled by micro-photoluminescence intensity mapping. The formation mechanisms of each stacking fault were also considered.

Characterization of Stacking Faults in 4H-SiC Epilayers by Room-Temperature Microphotoluminescence Mapping. G.Feng, J.Suda, T.Kimoto: Applied Physics Letters, 2008, 92[22], 221906