Undoped layers with thickness of 278µm were grown by hydride vapour phase epitaxy method. The samples with different threading dislocation densities of 9.0 x 106 and 7.2 x 106/cm2 were irradiated by electron-beam with the energy of 1MeV and dose of 1015/cm2. The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron-beam irradiation, the defects appeared to states with the activation energies of 0.61, 0.30 and 0.57eV.

Dislocation Related Defect States in GaN Irradiated with 1MeV Electron-Beam. D.U.Lee, L.K.Ha, J.S.Kim, E.K.Kim, E.K.Koh, I.K.Han: Physica Status Solidi C, 2008, 5[6], 1630-2