The edge and threading dislocations of M-plane GaN epilayers grown on γ-LiAlO2 were studied by high-resolution transmission electron microscope. It was found that edge dislocations were grown in [11¯•0] direction while threading dislocations were generated along a1 or -a2 axes. A single stacking fault in the M-plane GaN epilayer was also observed.

Line Defects of M-plane GaN Grown on γ-LiAlO2 by Plasma-Assisted Molecular Beam Epitaxy. I.Lo, C.H.Hsieh, Y.L.Chen, W.Y.Pang, Y.C.Hsu, J.C.Chiang, M.C.Chou, J.K.Tsai, D.M.Schaadt: Applied Physics Letters, 2008, 92[20], 202106