A novel white-beam microdiffraction analysis of defects, strains and tilts in a free standing m -plane GaN film grown via hydride vapour phase epitaxy was presented. It was shown that misfit dislocations were grouped within cell boundaries creating local lattice rotations (tilts) between the growing cells. Distribution of lattice rotations in the film was not homogeneous. Regions of large rotations were separated by low rotations regions. The dominating rotation axis was parallel [11•0] direction. High in plane shear stress component was observed along [00•1].

White X-ray Microdiffraction Analysis of Defects, Strain and Tilts in a Free Standing GaN Film. R.I.Barabash, G.E.Ice, B.A.Haskell, S.Nakamura, J.S.Speck, W.Liu: Physica Status Solidi B, 2008, 245[5], 899-902