Quantitative lattice-site determination of manganese in spatially inhomogeneous low-temperature GaN was performed by channelling enhanced microanalysis. The technique allows one to measure the substitutional-to-interstitial ratio at a spatial resolution suitable to study individual single-crystalline columns. Numerical fitting to full dynamical Bloch wave calculations yields a fraction of 95.6%Mn incorporated on substitutional sites.

Substitutional-to-Interstitial Ratio of Manganese in Nanostructured GaN by Electron Channeling Enhanced Microanalysis. T.Niermann, D.Mai, M.Roever, M.Kocan, J.Zenneck, J.Malindretos, A.Rizzi, M.Seibt: Journal of Applied Physics, 2008, 103[7], 073520