A model of basal plane stacking faults as boundaries between incoherently scattering domains in m-plane GaN films was reviewed. m-Plane GaN films were analyzed with a modified version of the Williamson–Hall analysis in order to determine the length-scale of coherent scattering and tilt-mosaic contribution to X-ray rocking curve widths for the primary in-plane directions. This analysis showed that basal plane stacking faults were the predominant source of rocking-curve width anisotropy in the m-plane films, and indicated that the modified Williamson–Hall analysis could be used as a non-destructive technique for measuring basal-plane stacking fault densities in m-GaN films.

Basal Plane Stacking-Fault Related Anisotropy in X-Ray Rocking Curve Widths of m-Plane GaN. M.B.McLaurin, A.Hirai, E.Young, F.Wu, J.S.Speck: Japan Journal of Applied Physics, 2008, 47, 5429-31