A transmission electron microscopy study of the misfit dislocation networks between InN quantum dots and GaN substrate/capping layer was presented. Applying the geometric phase algorithm in planar-view orientation, a complete characterization of the first interface shows a set of three families of 60° molecular dynamics lying along the three <11•0> directions without node formation. The growth of a GaN capping layer decreased the plastic relaxation degree of the InN quantum dots by a rearrangement of the molecular dynamics. The full relaxation of the capping layer suggest that no changes will occur in the quantum dot strain state during later growths.

Configuration of the Misfit Dislocation Networks in Uncapped and Capped InN Quantum Dots. J.G.Lozano, A.M.Sánchez, R.García, D.González, M.Herrera, N.D.Browning, S.Ruffenach, O.Briot: Applied Physics Letters, 2007, 91[7], 071915