Positron annihilation spectroscopy was used to study vacancy defects in (Zn,Mn)O crystals grown by chemical vapour transport. The results showed that Zn vacancies were present in both as-grown and high-temperature annealed ZnO and Zn0.985Mn0.015O. In addition, O vacancies were observed in ZnO with no Mn. After annealing in O2 at 1000C, there was no change in the vacancy distribution in ZnO, while the Zn vacancy concentration increased by an order of magnitude in Zn0.985Mn0.015O.

Vacancy Defects in (Zn,Mn)O. F.Tuomisto, A.Mycielski, K.Grasza: Superlattices and Microstructures, 2007, 42[1-6], 218-21