Resistometry was promoted here as being a very suitable method for the measurement of dislocation densities. This was especially true for dislocation densities of up to 1018/m2, but was also true at low dislocation densities in pure metals; where the method yielded about the same accuracy as did transmission electron microscopy, if low temperatures were used to suppress the phonon contribution. In order to apply the method to impure or alloyed metals, corrections had to be made which took account of the various scattering anisotropies of other crystal defects which coexisted with the dislocations.

Measurement of Dislocation Densities using Residual Electrical Resistivity Methods. M.Kocer, F.Sachslehner, M.Müller, E.Schafler, M.Zehetbauer: Materials Science Forum, 1996, 210-213, 133-40