Photoluminescence and optically detected magnetic resonance were employed to study effects of non-stoichiometry during the growth on defect formation in ZnO epilayers grown by molecular-beam epitaxy. Several defects were revealed via monitoring the yellow photoluminescence emission (~2.17eV) and their magnetic resonance signatures were obtained. The defects were concluded to be common for the molecular beam epitaxial growth and were facilitated during the off-stoichiometric growth conditions, especially under excess of O.

Effects of Stoichiometry on Defect Formation in ZnO Epilayers Grown by Molecular-Beam Epitaxy - an Optically Detected Magnetic Resonance Study.

X.J.Wang, I.A.Buyanova, W.M.Chen, C.J.Pan, C.W.Tu: Journal of Applied Physics, 2008, 103[2], 023712