The kinetics of molybdenum disilicide (MoSi2) layer transformation into a Mo5Si3 one were studied during isothermal annealing of the MoSi2/Mo diffusion couple at 1200 to 1800C. It was revealed that the growth of an intermediate silicide layer obeyed a parabolic law and was not accompanied by formation of the lowest Mo3Si silicide. By analyzing the diffusion problem, the solid-phase diffusion coefficient of Si in the Mo5Si3 layer was calculated (figure 5).

Diffusion Annealing of Mo/MoSi2 Couple and Silicon Diffusivity in Mo5Si3 Layer. H.A.Chatilyan, S.L.Kharatyan, A.B.Harutyunyan: Materials Science and Engineering A, 2007, 459[1-2], 227-32