A K- and Q-band electron spin resonance study, combining two detection modes, on structures composed of Si nanoparticles (~2nm across) embedded in a SiO2 matrix obtained by annealing of SiO/SiO2 superstructures unveils the observed principal Si dangling bond signal as solely comprised of the intrinsic Pb(0) and Pb1 Si/SiO2 interface defect spectra, of comparable densities. Based on independent particle density counting, about one Pb-type defect was found at every 1.4 Si nanoparticles. Relying on the known properties of Pb-type defects in standard microscopic Si/SiO2, the data would comply with Si nanocrystallites with morphology, schematically, of [100] truncated (111) octahedrons. Both types and densities of observed point defects indicate a structure of quality much alike that of standard thermal Si/SiO2.

Paramagnetic Point Defects at SiO2/Nanocrystalline Si Interfaces. A.Stesmans, M.Jivanescu, S.Godefroo, M.Zacharias: Applied Physics Letters, 2008, 93[2], 023123