Interfacial and mesoscopic size effects in molecular beam epitaxy-grown CaF2/BaF2 heterolayers were quantitatively analyzed on the basis of Gouy-Chapman and Mott-Schottky space-charge profiles. The linear dependence of the overall parallel conductivity on the inverse interfacial spacing found for large interfacial spacings (>50nm) could be obtained from both models being in good agreement with the experimental data. An upward bending occurring for small interfacial spacings (<30nm) could only be reproduced by the Mott-Schottky model based on the assumption of frozen-in impurity profiles.

Defect Chemical Modeling of Mesoscopic Ion Conduction in Nanosized CaF2/BaF2 Multilayer Heterostructures. X.Guo, I.Matei, J.Jamnik, J.S.Lee, J.Maier: Physical Review B, 2007, 76[12], 125429 (7pp)