Using the elastic-scattering quantum chemistry technique, it was shown that a surface atomic wire fabricated by extracting a line of S surface atoms from the planar MoS2 lamellar substrate created enough electronic states in the MoS2 surface band gap for this wire to have a large conductance. The nature of the surface electronic states introduced by the S vacancies was investigated for increasing numbers of vacancies for a wire length of up to 10nm. When contacted by the two Au nano-electrodes, the wire created surface pseudoballistic channels and the wire conductance does not decrease with length. The effects of the nanoelectrode-wire distance and of the lateral electrode-wire overlap on the conductance of the wire were also considered. It was found that the conductance of the junction could be increased threefold by increasing the lateral overlap.

Calculation of the Conductance of a Finite Atomic Line of Sulfur Vacancies Created on a Molybdenum Disulfide Surface. K.S.Yong, D.M.Otalvaro, I.Duchemin, M.Saeys, C.Joachim: Physical Review B, 2008, 77[20], 205429 (9pp)