AlGaN/GaN high electron mobility transistors grown onto 150mm Si(111) substrates were reported. The sheet resistance of the AlGaN/GaN high electron mobility transistor structure was as low as 260Ω/square. The electron mobility was in the range of 1560 to 1650cm2/Vs. The crack-free mirror-like wafers were obtained by using a simple AlGaN/AlN buffer. The mechanism for dislocation reduction in GaN above the AlGaN/AlN buffer was deduced. The dislocation density was around (1.5–2.5) x 109/cm2. Some of the wafers were processed and a current density close to 1A/mm was achieved. The maximum transconductance was 270mS/mm and the on-state resistance was as low as 2.6Ωmm.

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity. K.Cheng, M.Leys, S.Degroote, J.Derluyn, B.Sijmus, P.Favia, O.Richard, H.Bender, M.Germain, G.Borghs: Japanese Journal of Applied Physics, 2008, 47, 1553-5