Calculations within density functional theory on the basis of the local density approximation were carried out in order to study the properties of intrinsic point defects in aluminum antimonide. Special care was taken to address finite-size effects, band-gap error, and symmetry reduction in the defect structures. The correction of the band gap was based upon a set of GW calculations. The most important defects were identified as being the Al interstitial, Ali,Al+, the Sb antisites, SbAlo and SbAl+, and the Al vacancy VAl3-. The intrinsic defect and charge carrier concentrations in the impurity-free material were calculated by self-consistently solving the charge neutrality equation. The impurity-free material was found to be n-type conducting at finite temperatures. Intrinsic Point Defects in Aluminum Antimonide. D.Åberg, P.Erhart, A.J.Williamson, V.Lordi: Physical Review B, 2008, 77[16], 165206 (11pp)