The photoluminescence spectra of CdS single crystals irradiated with electrons (E = 1.2MeV, Φ = 2 x 1017/cm2) were investigated in the visible and near-infrared regions. Some samples of the CdS single crystals were preliminarily irradiated with neutrons (E = 2MeV, Φ = 2 x 1018/cm2) with the aim of increasing the concentration of initial structural defects. By analyzing the peak intensities of photoluminescence in the irradiated single crystals at the wavelengths of λm = 0.720, 1.030 and 0.605μm, it was concluded that the CdS samples with a low concentration of structural defects in the initial state possessed the highest resistance to electron radiation. It was assumed that the observed transformation of the photoluminescence spectra of the imperfect CdS single crystals subjected to electron irradiation was determined by either the mechanisms of sub-threshold defect formation or the transformation of the defect complexes in elastic and electric fields near to extensive structural damage of the crystal lattice.

Influence of the Defect State of Samples on the Luminescence Spectra of CdS Single Crystals Irradiated by Electrons. G.E.Davidyuk, V.V.Bozhko, G.L.Mironchuk, V.Z.Pankevich: Physics of the Solid State, 2007, 49[12], 2238-41