The shape of Ag profiles obtained in CdTe after 111Ag implantation and subsequent annealing strongly depended upon the external conditions during annealing; yielding quite different types of diffusion profile. By simulating these data, quantitative information on various thermodynamic parameters was obtained. At a temperature of 828K, the experimental Ag profiles reflected the distribution of the intrinsic defects after diffusion annealing. In this way, information on the diffusivity of the intrinsic defects, Cd-interstitial and Cd-vacancy, was obtained. Whereas, for the Ag impurity, only limiting values regarding ionization energy, the diffusivity of interstitially incorporated and the thermal stability of substitutionally incorporated Ag were obtained.

Thermodynamic Properties of Defects in CdTe as Derived by Diffusion Experiments. F.Wagner, H.Wolf, J.Kronenberg, T.Wichert, R.Grill, E.Belas, Isolde: Physica B, 2007, 401-402, 286-90