The diffusion of charged point defects was studied theoretically in shallow-donor-doped Te-rich CdTe, which was typically used for the preparation of radiation detectors. The diffusion model involved complete charge defect statistics including the formation of associates and an internal electric field induced by the charged-defect gradient. It was shown how extrinsic doping influenced the rate of chemical diffusion; which could be both accelerated or retarded. In case of strongly compensated material at low temperatures, the diffusion of compensating Cd vacancies was significantly enhanced in comparison with the undoped case, and defect relaxation was enhanced this way.

Diffusion of Charged Defects in Tellurium-Rich CdTe. R.Grill, E.Belas, J.Franc, P.Höschl, P.Morave: Nuclear Instruments and Methods in Physics Research A, 2008, 591[1], 218-20