The results of studying the diffusion of Cr impurity in GaAs using electrical measurements were reported. The dependences of the diffusion coefficient and limiting solubility of electrically active Cr atoms in GaAs upon temperature (at fixed pressures of As vapor) and upon the pressure of As vapor (at fixed temperature) were determined. The dependence of the Cr diffusion coefficient in GaAs upon the ratio between the volume of the sample under study to the volume of the cell in the case of pronounced deviation from the crystal’s stoichiometry towards Ga excess was established. The obtained experimental data were analyzed on the basis of concepts concerning the dissociative mechanism of migration of Cr atoms in the GaAs crystal lattice. According to this mechanism, the diffusion coefficient depended heavily upon the concentration of Ga vacancies.

Effect of the State of Vacancy Equilibrium on Diffusion of Chromium Impurity in Gallium Arsenide. S.S.Khludkov: Semiconductors, 2008, 42[3], 370-4