The micromechanical properties of Te-doped GaAs single crystals with a free carrier density of 1017 to 5 x 1018/cm3 were studied. Among the results obtained were an observed non-monotonic concentration dependence of the microhardness, the lengths of dislocation rosette rays, the densities of dislocations, and the position and half-width of the Raman line of a transverse optical phonon. The observations were interpreted in terms of spatial correlations in the impurity defect distribution.

Effect of Correlation in the Impurity Defect Distribution on the Micromechanical Properties of GaAs:Te Single Crystals. V.A.Bogdanova, N.A.Davletkildeev, M.M.Nukenov, N.A.Semikolenova: Physics of the Solid State, 2008, 50[2], 244-9