It was noted that the formation of defect states on semiconductor surfaces, at the interfaces with thin films and in semiconductor volumes, was usually predetermined by such parameters as the semiconductor growth process, surface treatment procedure, passivation, thin film growth kinetics, etc. The relationship between the processes leading to the formation of defect states and their passivation in Si- and GaAs-related semiconductors and structures was presented. Particular attention was paid to the oxidation kinetics of Y-stabilized zirconium/SiO2/Si and Sm/GaAs structures. Plasma anodic oxidation of Y-stabilized Zr-based structures reduced the size of polycrystalline Si blocks localized at thin film/Si interfaces. Samarium deposited before oxidation onto GaAs surfaces led to the elimination of EL2 and/or ELO defects in MOS structures. Consequently, the results of the successful passivation of deep traps in the interface region by CN− atomic groups using HCN solutions on oxynitride/Si and double oxide layer/Si structures were presented. This was thought to be the first time that the X-ray reflectivity method had been used to determine both the density of SiO2-based multilayer structure and the corresponding roughness (interface and surface).

Passivation of Defect States in Si-Based and GaAs Structures. E.Pinčík, H.Kobayashi, R.Brunner, M.Takahashi, Y.L.Liu, L.Ortega, K.Imamura, M.Jergel, J.Rusnák: Applied Surface Science, 2008, 254[24], 8059-66