An interesting observation was reported concerning the thermal annealing of a Be-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well grown by molecular beam epitaxy. A quantum well, doped to 6 x 1019/cm3, exhibited superior thermal properties and an about six times larger photoluminescence than an undoped quantum well with the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that Be suppressed In-diffusion and stabilized the (metastable) dilute nitride heterostructure during annealing.

Suppression of Annealing-Induced In Diffusion in Be-Doped GaInAsN/GaAs Quantum Well. J.Pakarinen, C.S.Peng, V.Polojärvi, A.Tukiainen, V.M.Korpijärvi, J.Puustinen, M.Pessa, P.Laukkanen, J.Likonen, E.Arola: Applied Physics Letters, 2008, 93[5], 052102