The local atomic structure of a Ga1-xMnxAs (x = 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of Ga and/or As tetrahedra in the GaMnAs unit cell.

Imaging of Interstitial Atoms in Ga1-xMnxAs Layers by Means of X-ray Diffuse Scattering. M.Kopecký, E.Busetto, A.Lausi, Z.Sourek, J.Kub, M.Cukr, V.Novák, K.Olejník, J.P.Wright: Journal of Applied Crystallography, 2008, 41[3], 544-7