The effect of Ne-ion implantation upon the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low-temperature photoluminescence measurements were carried out on implanted samples annealed at 900C. The peak at 3.41eV exhibited an interesting behavior in the as-grown and implanted samples. Annealing enhanced the intensity of this peak in as-grown samples, but suppressed it in all of the implanted samples. Capturing of defects by cavities during the gettering process was interpreted as being the reason for the observed behavior of this luminescence peak. An implantation dose of 5 x 1015/cm2 caused the complete quenching of yellow-band luminescence.

An Evidence of Defect Gettering in GaN. A.Majid, A.Ali, J.J.Zhu, Y.T.Wang, H.Yang: Physica B, 2008, 403[13-16], 2495-9