A novel white-beam microdiffraction analysis of defects, strains and tilts in a free-standing m-plane GaN film grown via hydride vapor-phase epitaxy was presented. It was shown that misfit dislocations were grouped within cell boundaries, creating local lattice rotations (tilts) between the growing cells. The distribution of lattice rotations in the film was not homogeneous. Regions of large rotation were separated by low-rotation regions. The predominant rotation axis was a parallel [11•0] direction. A high in-plane shear-stress component was observed along [00•1].

White X-ray Microdiffraction Analysis of Defects, Strain and Tilts in a Free Standing GaN Film. R.I.Barabash, G.E.Ice, B.A.Haskell, S.Nakamura, J.S.Speck, W.Liu: Physica Status Solidi B, 2008, 245[5], 899-902