The evolution of dislocations in so-called canti-bridge epitaxial GaN films was investigated by using transmission electron microscopy. The dislocation behaviour was found to be similar to that in the conventional LEO GaN films except for the enhanced dislocation-combination at the coalescence boundary that was a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the canti-bridge epitaxial GaN films. The enhancement of this dislocation-combination probability was believed to result from the inclined shape and the undulating morphology of the side-walls, which could be readily obtained in a wide range of applicable film-growth conditions during the GaN canti-bridge epitaxial process. Further development of the GaN canti-bridge epitaxial method and better crystal-quality of the GaN film both were expected.

Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method. Z.G.Xing, J.Wang, X.J.Pei, W.Wan, H.Chen, J.M.Zhou: Chinese Physics Letters, 2007, 24, 2353-6