Quantitative lattice-site determination of Mn in spatially inhomogeneous low-temperature GaN was performed by means of channelling enhanced micro-analysis. The technique permitted the measurement of the substitutional-to-interstitial ratio at a spatial resolution suitable for the study of individual single-crystalline columns. Numerical fitting to full dynamic Bloch wave calculations yielded a fraction of 95.6%Mn incorporated on substitutional sites.

Substitutional-to-Interstitial Ratio of Manganese in Nanostructured GaN by Electron Channeling Enhanced Microanalysis. T.Niermann, D.Mai, M.Roever, M.Kocan, J.Zenneck, J.Malindretos, A.Rizzi, M.Seibt: Journal of Applied Physics, 2008, 103[7], 073520