Defect equilibrium diagrams were constructed for intrinsic and extrinsic defects in GaN:Mg crystals by using the quasi-chemical formalism, and the formation of (VN-MgGa)x and (VN-MgGa)- defect complexes was analyzed. The results indicated that, under equilibrium conditions, VN vacancies in the charge state 3+ and MgGa’ impurities formed (VN-MgGa)- defect complexes, which compensated acceptors.

VN-Mg Defect Complexes as Compensating Centers in GaN:Mg. I.V.Rogozin, A.N.Georgobiani, M.B.Kotlyarevsky: Inorganic Materials, 2008, 44[11], 1208-12