High-quality GaN epilayers were grown onto patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN onto the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000C, the GaN epitaxial layer exhibited a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 x 109/cm2, which was comparable to those of conventional GaN epilayers grown onto sapphire substrates.

Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate. S.J.Lee, G.H.Bak, S.R.Jeon, S.H.Lee, S.M.Kim, S.H.Jung, C.R.Lee, I.H.Lee, S.J.Leem, J.H.Baek: Japanese Journal of Applied Physics, 2008, 47, 3070-3