The extrinsic diffusion of Zn in GaSb under Ga-rich conditions was analyzed on the basis of the kick-out and the dissociative diffusion mechanism. It was concluded that the change-over of interstitial Zn to substitutional Ga sites was mediated mainly by Ga interstitials (IGa). Fitting of the Zn profiles provided the relative contributions of IGa to Ga diffusion. This contribution was lower than the directly measured Ga diffusion coefficient; indicating that Ga diffusion in GaSb was mediated rather by Ga vacancies than by Ga interstitials, even under Ga-rich conditions. This finding supported transformation reactions between native point defects that were confirmed by first-principles total-energy calculations. In addition, Ga and Sb diffusion experiments under a 2H2 atmosphere were performed in order to reconcile the controversial data on self-diffusion in GaSb.

Defect Reactions in Gallium Antimonide Studied by Zinc and Self-Diffusion. K.Sundera, H.Bracht: Physica B, 2007, 401-402, 262-5