Experimental and modelling investigations were made of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1−xCdxTe with various graded-band-gap layers in the surface region of the material. The films, grown by molecular-beam epitaxy, were irradiated with B ions at room temperature to radiation doses ranging from 1011 to 3 x 1015 ions/cm2 with energies of 20 to 150keV and ion current densities of 0.001 to 0.2µA/cm2. The results gave the differences in implantation profile, damage accumulation and electrical properties as a function of the composition of the films, the implantation energy and dose in the region of introduction of the implant. Comparison of the experimental results with various models showed good agreement. Analysis of the distribution of the electrically active defects in the irradiated material showed that the variation in the composition gradient in the implantation region did not have a marked effect upon the migration of primary radiation defects.

Radiation Defect Formation in Graded-Band-Gap Epitaxial Structures Hg1-xCdxTe after Boron Ion Implantation. A.V.Voitsekhovskii, D.V.Grygorev, R.Smith: Semiconductor Science and Technology, 2008, 23[5], 055020 (7pp)