A HgInTe ingot was grown by using the vertical Bridgman method. The defects in the crystals were characterized by using the chemical etching method. A defect etchant was developed for HgInTe crystals. The etch pits of dislocations, micro-cracks and boundary were observed by scanning electron microscopy. It was shown that the etch-pit density of dislocations in HgInTe wafers was about 4 x 105/cm2. The Te and In were reduced at the grain boundaries, but were homogeneously distributed within the grains of as-grown crystals. The distribution of In in HgInTe crystals along the growth direction and radial direction was analyzed by means of electron-probe microscopy. It was found that the In concentration was higher in the initial part and lower in the final part of the ingot, which indicated that the segregation coefficient of In in HgInTe crystals was 1.15. The radial In concentration increased from the center to the edge of the wafers, and was homogeneous in the middle part.

Defect Characterization and Composition Distributions of Mercury Indium Telluride Single Crystals. L.Wang, W.Jie, Y.Yang, G.Xu, L.Fu: Journal of Crystal Growth, 2008, 310[11], 2810-4