The strain distribution in single and double self-assembled InAs/GaAs quantum dots was investigated theoretically by using a valence-force-field model. The results revealed a strong influence of the capping conditions upon the strain distribution in individual and stacked dots with wetting layers. The intermixing of atoms was incorporated into strain calculations, leading to the conclusion that the atomic intermixing could notably modify the strain profiles near to the interfaces of the stacked dot system.

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled InAs/GaAs Quantum Dots. M.Yang, S.J.Xu, J.Wang: Applied Physics Letters, 2008, 92[8], 083112