the CW and time-resolved photoluminescence and spectral response of 3-junction solar cells following rapid thermal annealing was studied. The improvement in material quality in the InGaP active layer after rapid thermal annealing was evident from the photoluminescence and spectral response. If the annealing temperature was 300C, the 10K photoluminescence intensity was maximum, which increased by a factor of about 30 as compared with that of the untreated sample. It was suggested that the removal of the P-vacancy-related complexes was responsible for an improvement of the material quality after rapid thermal annealing. The photocurrent of the cell also increased following rapid thermal annealing if the incident photon energy was greater than ~1.8eV.

Improvement of Material Quality of Multijunction Solar Cells by Rapid Thermal Annealing. M.D.Yang, Y.K.Liu, J.L.Shen, C.H.Wu: Japanese Journal of Applied Physics, 2008, 47, 4499-501