In the hetero-epitaxy of InN on GaN(00•1) by molecular-beam epitaxy, the lattice misfit strain was relieved by misfit dislocations formed at the interface between InN and GaN. Imaging by scanning tunnelling microscopy of the surfaces of thin InN epifilms revealed line features parallel to <11•0>. Their contrast became less apparent for thicker epifilms. From the interline spacing as well as a comparison with transmission electron microscopy studies, it was suggested that they corresponded to misfit dislocations beneath the surface. The scanning tunnelling microscopic contrast originated from both the surface distortion caused by the local strain at misfit dislocations and the electronic states of the defects.

Dislocation Network at InN/GaN Interface Revealed by Scanning Tunneling Microscopy. Y.Liu, Y.Cai, L.Zhang, M.H.Xie, N.Wang, S.B.Zhang, H.S.Wu: Applied Physics Letters, 2008, 92[23], 231907