Positron lifetime measurements were carried out on liquid-encapsulated Czochralski-grown undoped InP samples sliced from the middle part of ingots over 10 to 300K. At 70K, the spectra were measured in darkness, under illumination of infra-red LED, and with illumination off. The measurements at low temperatures revealed differing concentrations of a hydrogen indium vacancy complex, VInH4, in these samples. A relatively higher concentration of VInH4 in samples grown from P-rich undoped InP melts could be shown. An increase in resistivity of these samples could be expected when the temperature was low enough.

Investigation of Vacancy Defect in InP Crystal by Positron Lifetime Measurement. N.Sun, L.Mao, W.Mao, H.Wang, X.Wu, K.Bi, Z.Zhao, W.Guo, X.Wu, X.Zhou, B.Chen, Y.Zhao, K.Yang, T.Sun: Journal of Physics and Chemistry of Solids, 2008, 69[2-3], 372-5