High-energy light-ion irradiation was used to anneal H-related defect complexes and to modify the electronic properties of semi-insulating InP. Raman and infra-red spectroscopic measurements were used to investigate the annihilation of native defects in semi-insulating InP irradiated with 85MeV C. Irradiation resulted in a decrease in sample resistivity by four orders of magnitude and a change in the type of conductivity. The Raman spectroscopic results indicated an improvement in the InP sample due to irradiation up to an optimum fluence. The role of high electronic energy loss in defect annealing, which included modification of the electrical properties and crystal structure of irradiated SI-InP, was considered.

Dissociation of H-Related Defect Complex in InP using High Energy Light Ions. D.Kabiraj, A.Roy, J.C.Pivin, S.Ghosh: Journal of Applied Physics, 2008, 104[3], 033711