The growth of InSb1−xNx, using radio frequency N plasma-assisted molecular beam epitaxy, and its characterization using visible wavelength Raman scattering and X-ray diffraction was reported. The effects of the growth temperature (330 to 420C) and the plasma power (200 to 500W) upon the N-induced defects were studied. The Sb antisite defects from the A1gSb mode were shown to be predominant at a high growth temperature and a low plasma power. On the other hand, a high growth temperature and high plasma power induced the formation of interstitial Sb-N defects. A reduction in Sb-related defects was observed at the lowest substrate temperature (330C) and plasma power (200W). Based upon the experimental results, a possible mechanism for defect formation was suggested.

Defect Characterization of InSb1-xNx Grown using Radio Frequency Nitrogen Plasma-Assisted Molecular Beam Epitaxy. K.P.Lim, S.F.Yoon, H.T.Pham, S.Tripathy: Journal of Physics D, 2008, 41[16], 165301 (4pp)