The effect of the suppression of intrinsic conduction in the narrow-band-gap p-Bi0.5Sb1.5Te3 semiconductor subjected to plastic deformation was revealed. The effect consisted of slowing down the decrease in the thermopower coefficient at high temperatures due to intrinsic conduction. The observed effect could be caused by an enhancement of the misorientation of crystal grains or by the formation of linear structural defects (dislocations, microcracks), which were responsible for the decrease in the mobility of predominantly minority charge carriers.

Suppression of Intrinsic Conduction in p -Bi0.5Sb1.5Te3 under Plastic Deformation. B.M.Goltsman, V.A.Kutasov, L.N.Lukyanova: Physics of the Solid State, 2008, 50[2], 235-6