The effect of the H3AsO4 concentration, in ethylene glycol, upon the electrical properties of p-n junctions in Si was studied. The results could be used to select the ortho-arsenic acid concentration for producing As diffusion layers with a predetermined junction depth, sheet resistance, and As concentration. The maximum value of NsAs, 4.1 x 1019/cm3, was lower than the surface P concentration, NsP ~ 2 x 1020/cm3, which was tentatively attributed to the significant As vaporization from anodic oxide films and also to the fact that the As concentration in doped anodic oxide films was lower than the P concentration because, in the case of phosphate electrolytes, the sorption capacity of a monolayer was a factor of 2.7 higher.

Arsenic Diffusion from Doped Anodic Oxide Films to Silicon. L.P.Mileshko: Inorganic Materials, 2008, 44[2], 95-6