The effect of C co-doping upon B diffusion in amorphous Si was investigated during low-temperature annealing. The diffusivity of B was unaffected by C co-doping, but the fraction of mobile B was observed to increase with increasing C concentration. A concomitant reduction in B clustering was also observed at higher B co-implantation concentrations, consistent with a change in the local trap concentration. This was consistent with C possibly acting as a trap site for B and thereby changing the size and dynamics of the B cluster formation.Effect of Carbon Codoping on Boron Diffusion in Amorphous Silicon. L.A.Edelman, S.Jin, K.S.Jones, R.G.Elliman, L.M.Rubin: Applied Physics Letters, 2008, 93[7], 072107