The activation and diffusion behaviors of B in Si-on-insulator and strained Si-on-insulator were studied using standard rapid thermal processing treatments as well as flash-lamp annealing. After B implantation to different doses and at a low energy of 1keV, samples were annealed to activate the dopants, and secondary ion mass spectrometry and Hall measurements were used to determine B diffusion and the amount of activated dopants, respectively. In contrast to rapid thermal annealing, flash lamp annealing permitted activation without any significant diffusion of dopants. In addition, the effect of coating the samples with antireflection layers to increase the absorbed energy during flash annealing was investigated. As a result, the activation was increased significantly to values comparable with the activation obtained with standard annealing. Furthermore, the relationship between the observed B diffusion and activation as a function of the implantation and annealing parameters was considered in terms of the kinetics of the defects involved in these processes.

Boron Activation and Diffusion in Silicon and Strained Silicon-on-Insulator by Rapid Thermal and Flash Lamp Annealings. F.Lanzerath, D.Buca, H.Trinkaus, M.Goryll, S.Mantl, J.Knoch, U.Breuer, W.Skorupa, B.Ghyselen: Journal of Applied Physics, 2008, 104[4], 044908