An effective and process optimized method to suppress transient enhanced diffusion was proposed. The method presented consisted of designing a vacancy-type defect region which effectively blocked the flux of interstitials from the end-of-range region towards the surface of the substrate. This band of vacancy-type defects was produced by high-dose F+ co-implants. A detailed microstructural study was made of the vacancy-type defect evolution and it was demonstrated that, under optimum conditions, the vacancy-type defects effectively suppressed transient enhanced diffusion, B deactivation, and end-of-range defects. It was also shown how to choose processing conditions so as to obtain an effective interstitial barrier without introducing other detrimental diffusion effects.

On the Role of Nanocavities in Suppressing Boron Transient Enhanced Diffusion and Deactivation in F+ Coimplanted Silicon. L.F.Giles, C.Stapelmann, H.Cerva, F.Jahnel, C.Demeurisse, C.Vrancken, T.Hoffmann: Journal of Applied Physics, 2008, 103[10], 103525